STC4606 n&p pair enhancement mode mosfet 6.5a / -6.9a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STC4606 2008. v1 description the STC4606 is the n & p-channel enhancement mode p ower field effect transistor using high cell densit y dmos trench technology. this high density process i s especially tailored to minimize on-state resistan ce and provide superior switching performance. this de vice is particularly suited for low voltage applica tion such as notebook computer power management and othe r battery powered circuits, where high-side switching, low in-line power loss and resistance to transient are needed . pin configuration sop-8 part marking sop-8 y year a date code feature n-channel 30v/6.9a, r ds(on) = 30m typ @v gs = 10v 30v/6.0a, r ds(on) = 46m @v gs = 4.5v p-channel -30v/-6.0a, r ds(on) = 41m typ @v gs = -10v -30v/-5.0a, r ds(on) = 60m @v gs = - 4.5v super high density cell design for extremely low r ds(on) exceptional on-resistance and maximum dc current capability sop-8 package
STC4606 n&p pair enhancement mode mosfet 6.5a / -6.9a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STC4606 2008. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical n p unit drain-source voltage v dss 30 -30 v gate-source voltage v gss 20 20 v continuous drain current (tj=150 ) t a =25 t a =70 i d 6.5 5.8 -6.9 -5.0 a pulsed drain current i dm 26 -30 a continuous source current (diode conduction) i s 3.0 -3.0 a power dissipation t a =25 t a =70 p d 2.0 1.44 2.0 1.44 w operation junction temperature t j 150 storgae temperature range t stg -55/150 thermal resistance-junction to ambient t Q 10sec sready state r ja 62.5 110 62.5 110 /w
STC4606 n&p pair enhancement mode mosfet 6.5a / -6.9a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STC4606 2008. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua v gs =0v,i d =-250ua n p 30 -30 v gate threshold voltage v gs(th) v ds =vgs,i d =250 ua v ds =vgs,i d =-250ua n p 0.8 -1.0 1.8 -2.0 v gate leakage current i gss v ds =0v,v gs = 20v v ds =0v,v gs = 20v n p 100 100 na v ds =24v,v gs =0v v ds =-24v,v gs =0v n p 1 -1 zero gate voltage drain current i dss t j =55 v ds =24v,v gs =0v v ds =-24v,v gs =0v n p 5 -5 ua on-state drain current i d(on) v ds R 5v,v gs =10v v ds Q -5v,v gs =-10v n p 26 -30 a v gs = 10v, i d =6.9a v gs =-10v,i d =-6.0a n p 0.030 0.041 0.040 0.056 drain-source on-resistance r ds(on) v gs = 4.5v, i d =5.0a v gs =-4.5v,i d =-5.0 a n p 0.046 0.060 0.055 0.072 forward tran conductance g fs v ds =5v,i d =6.9a v ds =-15v,i d =-5.9a n p 15 13 s diode forward voltage v sd i s =1.0a,v gs =0v i s =-1.7a,v gs =0v n p 0.7 -0.7. 1.0 -1.0 v dynamic total gate charge q g n p 13.8 18.5 16.6 22.2 gate-source charge q gs n p 1.8 2.7 gate-drain charge q gd n-channel v ds =15v,v gs =10v i d 6.9a p-channel v ds =-15v,v gs =-10v i d 5.0a n p 2.0 4.5 nc n p 4.6 7.7 7 11.5 turn-on time t d(on) tr n p 4.1 5.7 6 8.5 n p 20.6 20.2 30 30 turn-off time t d(off) tf n-channel v ds =10v,r l =2.2 i d =1a,v gen =10v r g =3 p-channel v ds =-10v,r l =2.7 i d =-1a,v gen =-3v r g =2.7 n p 5.2 9.5 8 14 ns
STC4606 n&p pair enhancement mode mosfet 6.5a / -6.9a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STC4606 2008. v1 typical characterictics (n mos)
STC4606 n&p pair enhancement mode mosfet 6.5a / -6.9a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STC4606 2008. v1 typical characterictics (n mos)
STC4606 n&p pair enhancement mode mosfet 6.5a / -6.9a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STC4606 2008. v1 typical characterictics (p mos)
STC4606 n&p pair enhancement mode mosfet 6.5a / -6.9a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STC4606 2008. v1 ypical characterictics (p mos)
STC4606 n&p pair enhancement mode mosfet 6.5a / -6.9a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STC4606 2008. v1 sop-8 package outline
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